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| Freescale Semiconductor Technical Data Document Number: MRF21060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 12.5 dB Drain Efficiency -- 15% ACPR @ 5 MHz Offset -- - 47 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF21060LR3 MRF21060LSR3 2110 - 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 0.98 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.02 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21060LR3 MRF21060LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) 1. Part is internally matched both on input and output. Gps 11 12.5 -- dB Crss -- 2.7 -- pF VGS(th) VGS(Q) VDS(on) 2 2.5 -- -- 3.9 0.27 4 4.5 -- Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 6 1 Vdc Adc Adc Symbol Min Typ Max Unit 31 34 -- % IMD -- - 30 - 28 dBc IRL -- - 12 -- dB P1dB -- 60 -- W MRF21060LR3 MRF21060LSR3 2 RF Device Data Freescale Semiconductor R4 VGG + + C1 R2 C2 C3 C4 C5 R1 R3 + C6 C7 C8 B2 B3 VDD + Z8 Z9 Z10 RF INPUT Z1 C9 C10 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 C11 C12 Z15 RF OUTPUT DUT B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 Ferrite Beads, Fair Rite #2743019447 10 F, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 F Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 F, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 0.743 x 0.080 Microstrip 0.070 x 0.100 Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180 x 0.100 Microstrip 0.152 x 0.293 Microstrip 0.216 x 0.100 Microstrip 0.114 x 0.410 Microstrip 0.626 x 0.872 Microstrip 1.050 x 0.050 Microstrip 0.830 x 0.050 Microstrip 0.596 x 1.040 Microstrip 0.186 x 0.315 Microstrip 0.097 x 0.525 Microstrip 0.353 x 0.138 Microstrip 0.112 x 0.080 Microstrip 0.722 x 0.080 Microstrip 0.030 Glass Teflon(R), Arlon GX - 0300- 55- 22, 2 oz Cu Figure 1. MRF21060L Test Circuit Schematic MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 3 TO GATE BIAS FEEDTHRU C1 R1 C2 C3 C4 R2 R3 C5 C6 R4 C7 C8 B2 B3 TO DRAIN BIAS FEEDTHRU C9 C11 C10 C12 MRF21060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21060L Test Circuit Component Layout MRF21060LR3 MRF21060LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 IRL VDD = 28 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two-Tone Measurement, 100 kHz Tone Spacing Gps IMD -35 -40 2200 0 -5 -10 -15 -20 -25 -30 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH -20 -25 -30 -35 -40 ACPR Gps -45 -50 -55 2 10 4 8 12 6 14 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA -60 16 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 Figure 3. Class AB Broadband Circuit Performance Figure 4. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 900 mA -45 -50 -55 -60 -65 0.1 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 500 mA 700 mA VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing -20 -30 -40 3rd Order -50 -60 -70 -80 0.1 5th Order 7th Order VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 14 900 mA G ps , POWER GAIN (dB) 13 G ps , POWER GAIN (dB) 700 mA 12 500 mA 11 14 Pout = 60 W (PEP), IDQ = 500 mA f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing IMD 13 Gps 12.5 -22 -24 -26 -28 -30 -32 -34 -36 13.5 VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 1.0 10 100 10 0.1 12 22 24 26 28 30 -38 32 Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 5 f = 2110 MHz Zsource f = 2110 MHz 2170 MHz Zload 2170 MHz Zo = 5 VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP f MHz 2110 2140 2170 Zsource 2.40 - j0.55 2.26 - j0.87 2.08 - j1.23 Zload 3.07 - j2.05 2.89 - j2.38 2.66 - j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21060LR3 MRF21060LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF21060LR3 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C T M TA B M M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF21060LSR3 F MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21060LR3 MRF21060LSR3 8Rev. 9, 5/2006 Document Number: MRF21060 RF Device Data Freescale Semiconductor |
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